180 Photomicrosensor (Transmissive) EE-SX1082
Photomicrosensor (Transmissive)
EE-SX1082
I Dimensions
Note:All units are in millimeters unless otherwise indicated.
I Features
"Horizontal sensing aperture.
"PCB mounting type.
"High resolution with a 0.2-mm-wide aperture.
"RoHS Compliant.
I Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SX1082_2586664_6">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX1082_2586664_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
E
C
Unless otherwise specified, the
tolerances are ?.2 mm.
Item
Symbol Rated value
Emitter Forward current I
F
50 mA (seenote 1)
Pulse forward
current
I
FP
1 A (seenote2)
Reverse voltage V
R
4 V
Detector CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipation P
C
100 mW (seenote 1)
Ambient
temperature
Operating
Topr 40癈 to 85癈
Storage
Tstg 40癈 to 100癈
Soldering temperature
Tsol 260癈 (see note 3)
Description
Model
Photomicrosensor (transmissive) EE-SX1082
Item
Symbol
Value
Condition
Emitter Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
= 30 mA
Reverse current
I
R
0.01 礎 typ., 10 礎 max.
V
R
= 4 V
Peak emission wavelength ?/SPAN>
P
920 nm typ.
I
F
= 20 mA
Detector Light current
I
L
0.12 mA min.
I
F
= 20 mA, V
CE
= 5 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
= 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat) 0.08 V typ., 0.4 V max.
I
F
= 20 mA, I
L
= 0.05 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
850 nm typ.
V
CE
= 10 V
Rising time
tr
100 祍 typ.
V
CC
= 5 V, R
L
= 50 k&, I
L
= 0.1 mA
Falling time
tf
1,000 祍 typ.
V
CC
= 5 V, R
L
= 50 k&, I
L
= 0.1 mA
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